ROOM-TEMPERATURE ANNEALING OF SI IMPLANTATION DAMAGE IN INP

被引：12

作者：

AKANO, UG ^{[1
]}

MITCHELL, IV ^{[1
]}

SHEPHERD, FR ^{[1
]}

机构：

[1] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 20期

关键词：

D O I：

10.1063/1.105957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si+ ions to doses ranging from 3.6 X 10(11) to 2 X 10(14) cm-2. Room-temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses less-than-or-equal-to 4 X 10(13) cm-2, up to 70% of the initial damage (displaced atoms) annealed out over a period of almost-equal-to 85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constants t1 < 5 days and a longer t2 almost-equal-to 100 days. Anneal rates observed between 29 5 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant-induced vacancies is associated with the reordering of the InP lattice.

引用

页码：2570 / 2572

页数：3

共 12 条

[1] EPITAXIAL REGROWTH OF (100) INP LAYERS AMORPHIZED BY ION-IMPLANTATION AT ROOM-TEMPERATURE [J].