ANNEALING OF SELENIUM IMPLANTED INDIUM-PHOSPHIDE USING A GRAPHITE STRIP HEATER

被引：17

作者：

GILL, SS

SEALY, BJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.334047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1189 / 1194

页数：6

相关论文

共 16 条

[1] IMPLANTATION AND PH3 AMBIENT ANNEALING OF INP [J].

DAVIES, DE ;

POTTER, WD ;

LORENZO, JP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) :1845-1848

[2] N-TYPE DOPING OF INDIUM-PHOSPHIDE BY IMPLANTATION [J].

DAVIES, DE ;

LORENZO, JP ;

RYAN, TG .

SOLID-STATE ELECTRONICS, 1978, 21 (07) :981-985

[3] PULSE ELECTRON ANNEALING OF ION-IMPLANTED INP [J].

DAVIES, DE ;

LORENZO, JP ;

RYAN, TG ;

FITZGERALD, JJ .

APPLIED PHYSICS LETTERS, 1979, 35 (08) :631-633

[4]

DEVLIN WJ, 1979, I PHYS C SER, V45, P510

[5] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA [J].

DONNELLY, JP ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :418-420

[6] THE ELECTRICAL CHARACTERISTICS OF INP IMPLANTED WITH THE COLUMN-IV ELEMENTS [J].

DONNELLY, JP ;

FERRANTE, GA .

SOLID-STATE ELECTRONICS, 1980, 23 (11) :1151-1154

[7] RUTHERFORD BACKSCATTERING AND ELLIPSOMETRY OF SELENIUM IMPLANTED INP [J].

GILL, SS ;

SEALY, BJ ;

STEPHENS, KG .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (10) :1915-1922

[8] MULTIPLY SCANNED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED INDIUM-PHOSPHIDE [J].

GILL, SS .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :729-731

[9] PULSED LASER ANNEALING OF SELENIUM IMPLANTED INP [J].

GILL, SS ;

TOPHAM, PJ ;

SEALY, BJ ;

STEPHENS, KG .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (12) :2333-&

[10] ANNEALING OF SI3N4-CAPPED ION-IMPLANTED INP [J].

GILL, SS ;

SEALY, BJ ;

TOPHAM, PJ ;

BARRETT, NJ ;

STEPHENS, KG .

ELECTRONICS LETTERS, 1981, 17 (17) :623-624