STRUCTURAL AND ELECTRICAL-PROPERTIES OF SI-IMPLANTED AND SE-IMPLANTED INP LAYERS

Semi-insulating Fe-doped [100]-InP wafers were implanted in a nonchanneling direction with 300 keV Si+ and 600 keV Se++ ions in the dose range of 1 X 10(12)-1 X 10(16) cm-2. The implantation temperature was varied between room temperature and 425 K. The samples were capped and short time annealed by means of a graphite strip heater at 700-975-degrees-C. The defect investigation of the as-implanted as well as of the annealed samples was performed with Rutherford backscattering spectrometry. A simple vacancy diffusion model is applied to describe the damage production, which yields critical implantation temperatures for amorphization. These temperatures are approximately 390 K for Si and 420 K for Se, for higher temperatures amorphization is not possible in InP. The electrical properties of the annealed layers are measured by the van der Pauw-Hall technique. The results are discussed with respect to the residual damage after annealing. Saturation values of the electrical activation were achieved at 3 X 10(14) cm-2 for Si and 4 X 10(14) cm-2 for Se, respectively.