SiGN alloys deposited by electron cyclotron resonance plasma chemical vapor deposition

被引：103

作者：

Gomez, FJ ^{[1
]}

Prieto, P ^{[1
]}

Elizalde, E ^{[1
]}

Piqueras, J ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS APLICADA,MADRID 28049,SPAIN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 06期

关键词：

D O I：

10.1063/1.117887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon-carbon-nitrogen alloys have been deposited by electron cyclotron resonance plasma chemical vapor deposition. Nitrogen, methane, and argon diluted silane have been used as precursor gases. The properties of the deposited films were studied by spectroscopic ellipsometry, Fourier transform infrared spectroscopy, X-ray photoelectron, and Auger electron spectroscopy. The structure and bond formation in the SiCN films is discussed in terms of the present results. (C) 1996 American Institute of Physics.

引用

页码：773 / 775

页数：3

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