Carbon bonding site in Si(001)c(4x4) prepared by hydrocarbon decomposition -: art. no. 233306

被引:15
作者
Ahn, JR
Lee, HS
Kim, YK
Yeom, HW [1 ]
机构
[1] Yonsei Univ, Ctr Atom Wires & Layers, Seoul 120749, South Korea
[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
关键词
D O I
10.1103/PhysRevB.69.233306
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have reexamined the structural models of Si(001)c(4x4) induced by carbon, which is important for the initial C incorporation, using high-resolution photoemission. Through a proper thermal treatment after the thermal decomposition of the typical carrier gas molecules of C2H2 and C2H4, a well-ordered c(4x4) surface was reproducibly prepared, which exhibits only a single well defined C 1s component with a binding energy of 282.8 eV. This indicates that the c(4x4) surface is made of a unique C bonding configuration in contrast to some structure models. From the angular variation of the C 1s photoemission intensity, we confirm that the unique C bonding site corresponds to the incorporation into the subsurface layers rather than a metastable surface adsorption.
引用
收藏
页码:233306 / 1
页数:4
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