ATOMIC-STRUCTURE OF THE METASTABLE C(4X4) RECONSTRUCTION OF SI(100)

被引：81

作者：

UHRBERG, RIG ^{[1
]}

NORTHRUP, JE ^{[1
]}

BIEGELSEN, DK ^{[1
]}

BRINGANS, RD ^{[1
]}

SWARTZ, LE ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.46.10251

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A c (4 X 4) reconstruction can be formed on the clean Si(100) surface by special surface treatment techniques. We have studied the atomic structure of this metastable phase, which is prepared by hydrogen exposure and annealing, using scanning tunneling microscopy and first-principles total-energy calculations. A new model is derived which has two types of surface dimers oriented parallel and perpendicular to the underlying 2 X 1 dimer rows. Our results are thus in disagreement with the missing dimer model which has earlier been proposed in the literature.

引用

页码：10251 / 10256

页数：6

共 16 条

[1] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

BIEGELSEN, DK ;

BRINGANS, RD ;

NORTHRUP, JE ;

SWARTZ, LE .

PHYSICAL REVIEW B, 1990, 41 (09) :5701-5706

[2] IMAGING OF CHEMICAL-BOND FORMATION WITH THE SCANNING TUNNELING MICROSCOPE - NH3 DISSOCIATION ON SI(001) [J].

HAMERS, RJ ;

AVOURIS, P ;

BOZSO, F .

PHYSICAL REVIEW LETTERS, 1987, 59 (18) :2071-2074

[3] SI(100)-C(4X4) METASTABLE SURFACE OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

IDE, T ;

MIZUTANI, T .

PHYSICAL REVIEW B, 1992, 45 (03) :1447-1449

[4] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[5] FORMATION AND ATOMIC CONFIGURATION OF SI(100)C(4X4) STRUCTURE [J].

KATO, K ;

IDE, T ;

NISHIMORI, T ;

ICHINOKAWA, T .

SURFACE SCIENCE, 1988, 207 (01) :177-185

[6] SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS [J].

KOHN, W ;

SHAM, LJ .

PHYSICAL REVIEW, 1965, 140 (4A) :1133-&

[7] A RHEED STUDY OF THE SURFACE RECONSTRUCTIONS OF SI(001) DURING GAS SOURCE MBE USING DISILANE [J].

LIU, WK ;

MOKLER, SM ;

OHTANI, N ;

ROBERTS, C ;

JOYCE, BA .

SURFACE SCIENCE, 1992, 264 (03) :301-311

[8]

MOKLER SM, 1991, APPL PHYS LETT, V59, P1

[9]

MULLER K, 1984, DETERMINATION SURFAC, P483

[10] ALUMINUM ON THE SI(100) SURFACE - GROWTH OF THE 1ST MONOLAYER [J].

NOGAMI, J ;

BASKI, AA ;

QUATE, CF .

PHYSICAL REVIEW B, 1991, 44 (03) :1415-1418

← 1 2 →