SI(100)-C(4X4) METASTABLE SURFACE OBSERVED BY SCANNING TUNNELING MICROSCOPY

被引：38

作者：

IDE, T

MIZUTANI, T

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Ibaraki 305, Tsukuba

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.45.1447

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The atomic arrangement of a Si(100)-c(4 x 4) metastable surface is investigated using scanning tunneling microscopy (STM). The structure is formed on a Si(100) surface by exposing to hydrogen with a pressure of 2 x 10(-5) Torr at 700-degrees-C over 30 min. A comparison of filled- and empty-state STM images indicates the existence of a single dimer on the top layer in the c(4 x 4) unit cell. This result contradicts all previously proposed structural models, which have a missing dimer in the unit cell. The structure revealed by the present study is in reasonable agreement with the characteristic low-energy-electron-diffraction pattern previously reported.

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页码：1447 / 1449

页数：3

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