ZnSe for mirror passivation of high power GaAs based lasers

被引：18

作者：

Chand, N ^{[1
]}

Hobson, WS ^{[1
]}

deJong, JF ^{[1
]}

Parayanthal, P ^{[1
]}

Chakrabarti, UK ^{[1
]}

机构：

[1] AT&T BELL LABS,LUCENT TECHNOL,BREINIGSVILLE,PA 18031

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 17期

关键词：

gallium arsenide; semiconductor junction lasers;

D O I：

10.1049/el:19961062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report a method for passivating vacuum cleaved facets of high power GaAs based lasers using a thin fam of ZnSe formed by molecular beam deposition for preventing facet degradation, and thus for improving their long term stability and reliability at high power operation. ZnSe has a large bandgap of 2.7eV and a lattice constant close to that of GaAs with a lattice mismatch of only 0.23%. ZnSe evaporates congruently at a comparatively low temperature of similar to 750 degrees C from an effusion cell, and deposits as stoichiometric ZnSe film. The authors have used the technique for 980nm InGaAs/lnGaP/GaAs lasers.

引用

页码：1595 / 1596

页数：2

共 7 条

[1] DEGRADATION BEHAVIOR OF 0.98-MU-M STRAINED-QUANTUM-WELL INGAAS/ALGAAS LASERS UNDER HIGH-POWER OPERATION [J].