IMPROVEMENT OF CATASTROPHIC OPTICAL-DAMAGE LEVEL OF ALGAINP VISIBLE LASER-DIODES BY SULFUR TREATMENT

被引：40

作者：

KAMIYAMA, S

MORI, Y

TAKAHASHI, Y

OHNAKA, K

机构：

[1] Opto-Electronics Research Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka 570

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 23期

关键词：

D O I：

10.1063/1.104833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An increase of 70% in the catastrophic optical damage (COD) level of AlGaInP visible laser diodes is achieved by sulfur treatment. From transmission electron microscope and energy dispersive microanalysis, we have confirmed that most of the oxide at the mirror facets is replaced by sulfur after this treatment. It is thought that oxide at the facets introduces surface states which cause the COD, and removal of the oxide by sulfur treatment results in the higher COD level.

引用

页码：2595 / 2597

页数：3

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