NOVEL WINDOW-STRUCTURE ALGAINP VISIBLE-LIGHT LASER-DIODES WITH NONABSORBING FACETS FABRICATED BY UTILIZING GAINP NATURAL SUPERLATTICE DISORDERING

被引：42

作者：

UENO, Y

FUJII, H

KOBAYASHI, K

ENDO, K

GOMYO, A

HARA, K

KAWATA, S

YUASA, T

SUZUKI, T

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Miyamae-ku, 213, 4-1-1, Miyazaki, Kawasaki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 09期

关键词：

AIGalnP; Bandgap energy; Disordering; High power; MOVPE; Natural superlattice; Visible-light laser; Window-structure; Zn diffusion;

D O I：

10.1143/JJAP.29.L1666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Window-structure AlGaInP visible-light (λL=680 nm) laser diodes (LDs) have been fabricated, for the first time, by utilizing GaInP natural superlattice (NSL) disordering with selective Zn diffusion. The bandgap energy for the active layer near the mirror facets is increased by 70 meV by the NSL disordering. An 80 mW output power in a fundamental transverse-mode has been achieved for the uncoated window LDs under 1µsec long pulsed operations. The maximum output power density for the window LDs is estimated to be 10 MW/cm2, which is five times higher than that for conventional LDs. © 1990 The Japan Society of Applied Physics.

引用

页码：L1666 / L1668

页数：3

共 11 条

[1] HIGH-POWER OPERATION OF A TRANSVERSE-MODE STABILIZED ALGALNP VISIBLE-LIGHT (LAMBDA-L = 683NM) SEMICONDUCTOR-LASER [J].