LOW-PRESSURE MOVPE GROWTH OF SI-DOPED GA0.5IN0.5P USING SI2H6

被引：18

作者：

HOTTA, H ^{[1
]}

HINO, I ^{[1
]}

SUZUKI, T ^{[1
]}

机构：

[1] NEC CORP,DIV COMPOUND SEMICOND DEVICE,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90593-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：618 / 623

页数：6

共 14 条

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APPLIED PHYSICS LETTERS, 1986, 48 (03) :207-208

[6] 661.7 NM ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE LASERS WITH ALUMINUM-CONTAINING QUATERNARY ACTIVE LAYER [J].

KOBAYASHI, K ;

KAWATA, S ;

GOMYO, A ;

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SUZUKI, T .

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[7] ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS [J].

KOBAYASHI, K ;

KAWATA, S ;

GOMYO, A ;

HINO, I ;

SUZUKI, T .

ELECTRONICS LETTERS, 1985, 21 (20) :931-932

[8] SILICON DOPING OF GAAS AND ALXGA1-XAS USING DISILANE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[9] DECOMPOSITION KINETICS OF OMVPE PRECURSORS [J].

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JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) :247-254

[10] H2SE MEMORY EFFECTS UPON DOPING PROFILES IN GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MO-CVD) [J].

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