AES and XPS observations or HFCVD diamond deposition on monocrystalline(111)copper

Diamond has been deposited on monocrystalline (111) copper via a hot filament chemical vapor process. The diamond growth is studied by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), directly connected to the growth chamber. Prior to deposition, the substrates were cleaned in situ by Ar+ etching and annealing. The evolution of the AES C KVV line suggests the following three-step process: first the formation of one highly graphitic layer, then the very slow growth of graphitic layer, more and more distorted when going away from the copper surface and finally, when a critical size corresponding to 5-6 layers is reached, diamond nucleation and growth. A very long induction time (more than 10 h) is observed before the growth of graphitic layers. This is ascribed to the strong interaction of the graphite layer with the copper surface. This nucleation process is roughly in agreement with the recrystallisation model of diamond nucleation from amorphous carbon proposed by J. Singh and M. Vellaikal, J. Appl. Phys., 73 (1993), 2531. (C) 1997 Elsevier Science S.A.