Chemical potential shift in overdoped and underdoped La2-xSrxCuO4

被引：210

作者：

Ino, A ^{[1
]}

Mizokawa, T ^{[1
]}

Fujimori, A ^{[1
]}

Tamasaku, K ^{[1
]}

Eisaki, H ^{[1
]}

Uchida, S ^{[1
]}

Kimura, T ^{[1
]}

Sasagawa, T ^{[1
]}

Kishio, K ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT SUPERCONDUCT,BUNKYO KU,TOKYO 113,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.79.2101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The downward shift of the electron chemical potential mu with hole doping in La2-xSrxCuO4 has been deduced from the shifts of photoemission and inverse-photoemission spectra. While the shift is large (similar to 1.5 eV/hole) in overdoped samples, it is suppressed (<0.2 eV/hole) in underdoped samples, implying a divergent charge susceptibility near the metal-insulator transition. In the overdoped regime, the mu and the electronic specific heat coefficient gamma are consistently explained within Fermi-liquid theory, whereas the same analysis gives unphysical results in the underdoped regime, indicating the breakdown of the Fermi-liquid picture in the underdoped regime.

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页码：2101 / 2104

页数：4

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