Performance improvement by charge trapping of doping fluorescent dyes in organic memory devices

被引：35

作者：

Chen, Jiangshan ^{[1
]}

Ma, Dongge ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Grad Sch, Changchun 130022, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 03期

基金：

中国国家自然科学基金;

关键词：

THIN-FILM;

D O I：

10.1063/1.2234541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the memory effect in the devices consisting of dye-doped N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine sandwiched between indium-tin oxide and Ag electrodes. It was found that the on/off current ratio was greatly improved by the doped fluorescent dyes compared with nondoping devices. A mechanism of charge trapping was demonstrated to explain the improvement of the memory effect. For the off state, the conduction process is dominated by the trapping current, which is a characteristic of the space-charge limited current, whereas the on state is dominated by the detrapping current, and interpreted by Poole-Frenkel emission. (c) 2006 American Institute of Physics.

引用

页数：4

共 22 条

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