Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition

Structural, electrical, and optical properties of an InGaN-based light-emitting diode (LED) on an AlN/sapphire template have been studied and compared with the conventional LED properties on a sapphire substrate. In comparison to the LED on sapphire, the LED on AlN/sapphire template has shown better electrical and optical characteristics, which are due to a low threading dislocation density, high resistive, and thermal conductive AlN layer. An additional advantage is to grow a high-quality LED structure on an AlN/sapphire template without using low-temperature-grown GaN or an AlN buffer layer. (C) 2002 American Institute of Physics.