Enhanced ferroelectricity in Ti-doped multiferroic BiFeO3 thin films

被引：40

作者：

Wang, Yao

Nan, Ce-Wen ^{[1
]}

机构：

[1] Tsinghua Univ, State Key Lab New Ceram & Fine Progressing, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 05期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2222242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ti4+ ion-doped BiFeO3 thin films were prepared by sol-gel spin-coating technique on (111)Pt/Ti/SiO2/Si substrates. X-ray diffraction and scanning electron microscope revealed the single phase, and good surface and cross-section morphologies of the films, respectively. Leakage current density measurement indicated that the quality of the BiFeO3 films was improved by Ti4+ doping. By introducing a small amount of Ti ions into the sol-gel solution-processed BiFeO3 films, large enhancement in both remnant and saturation polarizations of the doped-BiFeO3 films in comparisons with the undoped BiFeO3 films was observed, due to the reduced leakage current, stabilization of the ferroelectric distortion by Ti4+, and more homogenous microstructure. (c) 2006 American Institute of Physics.

引用

页数：3

共 16 条

[1] ELECTRONIC-STRUCTURE STUDIES OF THE DIFFERENCES IN FERROELECTRIC BEHAVIOR OF BATIO3 AND PBTIO3 [J].