Electrical and structural properties of boron and phosphorus co-doped diamond films

被引：49

作者：

Hu, XJ ^{[1
]}

Li, RB ^{[1
]}

Shen, HS ^{[1
]}

Dai, YB ^{[1
]}

He, XC ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, State Key Lab MMCMs, Shanghai 200030, Peoples R China

来源：

CARBON | 2004年 / 42卷 / 8-9期

基金：

中国国家自然科学基金;

关键词：

diamond; doping; annealing; electron paramagnetic resonance; electrical properties;

D O I：

10.1016/j.carbon.2004.01.054

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Boron and phosphorus co-doped diamond films were prepared by ion implantation method. The correlation between the electrical and structural properties of the doped diamond films was investigated. Hall effect measurements indicate that the doped films are n-type conduction. The carrier concentrations of the samples are nearly equivalent while the Hall mobility and conductivity of B-P co-doped diamond films are higher than those of P-doped diamond films. EPR and Raman measurements indicate that the B-P co-doped diamond films have more compatible lattice structure than P-doped diamond films, which benefits to improve both the carrier mobility and conductivity of co-doped films. (C) 2004 Published by Elsevier Ltd.

引用

页码：1501 / 1506

页数：6

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