Raman scattering from In0.2Ga0.8N/GaN superlattices

被引：3

作者：

Kisoda, Kenji ^{[1
]}

Hirakura, Kohji ^{[2
]}

Harima, Hiroshi ^{[2
]}

机构：

[1] Wakayama Univ, Dept Phys, 930 Sakaedani, Wakayama 6408510, Japan

[2] Kyoto Inst technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565430

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have performed Raman scattering experiments on high quality In0.2Ga0.8N/GaN superlattices(SLs). The A(1) LO phonon mode from the In0.2Ga0.8N layer was observed in the Mg doped SL. This was attributable to manifestation of a resonance enhancement via acceptor levels formed by magnesium doping. The peak frequency of the A, LO mode shifted to high frequency side with the excitation energy. The frequency shift suggested that the composition of indium was fluctuated along the growth direction in the InGaN layer. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1997 / 2000

页数：4

共 10 条

[1]

Bergman L, 2000, SPRINGER SERIES MATE, V42, P273

[2] Phonons in ternary group-III nitride alloys [J].

Grille, H ;

Schnittler, C ;

Bechstedt, F .

PHYSICAL REVIEW B, 2000, 61 (09) :6091-6105

[3] Raman-scattering study of the InGaN alloy over the whole composition range -: art. no. 013511 [J].

Hernández, S ;

Cuscó, R ;

Pastor, D ;

Artús, L ;

O'Donnell, KP ;

Martin, RW ;

Watson, IM ;

Nanishi, Y ;

Calleja, E .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (01)

[4] Ohmic contact to p-GaN using a strained InGaN contact layer and its thermal stability [J].

Kumakura, K ;

Makimoto, T ;

Kobayashi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (4B) :2254-2256

[5] Activation energy and electrical activity of Mg in Mg-doped InxGa1-xN (x < 0.2) [J].

Kumakura, K ;

Makimoto, T ;

Kobayashi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (4B) :L337-L339

[6] Resonant Raman scattering in strained and relaxed InGaN/GaN multi-quantum wells [J].

Lazic, S ;

Moreno, M ;

Calleja, JM ;

Trampert, A ;

Ploog, KH ;

Naranjo, FB ;

Fernandez, S ;

Calleja, E .

APPLIED PHYSICS LETTERS, 2005, 86 (06) :1-3

[7]

MADELUNG O, 2003, SEMICONDUCTORS DATA, P109

[8] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

IWASA, N ;

NAGAHAMA, S ;

YAMADA, T ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B) :L1332-L1335

[9] Compositional dependence of the strain-free optical band gap in InxGa1-xN layers [J].

Pereira, S ;

Correia, MR ;

Monteiro, T ;

Pereira, E ;

Alves, E ;

Sequeira, AD ;

Franco, N .

APPLIED PHYSICS LETTERS, 2001, 78 (15) :2137-2139

[10] Small band gap bowing in In1-xGaxN alloys [J].

Wu, J ;

Walukiewicz, W ;

Yu, KM ;

Ager, JW ;

Haller, EE ;

Lu, H ;

Schaff, WJ .

APPLIED PHYSICS LETTERS, 2002, 80 (25) :4741-4743

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