Self-organized quantum wires and dots in III-V semiconductors

被引：35

作者：

Asahi, H

机构：

[1] Inst. of Sci. and Indust. Research, Osaka University, Ibaraki, Osaka 567, 8-1, Mihogaoka

来源：

ADVANCED MATERIALS | 1997年 / 9卷 / 13期

关键词：

D O I：

10.1002/adma.19970091305

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Review: The fabrication of quantum wires and quantum dots in III-V semiconductors using self-organization phenomena is reviewed. The Stranski-Krastanov (S-K) mode growth, step-bunching, and strain-induced lateral composition modulation techniques are covered. The Figure shows the vertical stacking of islands that are formed by the alternate S-K mode growth of five cycles of an In(Ga) quantum dot layer and a GaAs spacer layer.

引用

页码：1019 / +

页数：1

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