Improved double layer ITO/InP solar cells using annealing techniques

被引：3

作者：

Henry, J

Livingstone, J

机构：

[1] Department of Electrical Engineering, University of Western Australia, Neulands

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1996年 / 156卷 / 01期

关键词：

D O I：

10.1002/pssa.2211560129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

收藏

页码：K9 / K12

页数：4

相关论文

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[3] INDIUM-PHOSPHIDE SURFACE PROCESSING - AN FTIR ANALYSIS
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[4] SURFACE DEGRADATION OF INP DURING CONTACT FORMATION - AN FTIR ANALYSIS
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