Si 2p core-level shifts at the Si(100)-SiO2 interface: An experimental study

被引：24

作者：

Zhang, KZ

Holl, MMB

Bender, JE

Lee, S

McFeely, FR

机构：

[1] BROWN UNIV,DEPT CHEM,PROVIDENCE,RI 02912

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.54.7686

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si 2p core-level shifts are measured for a model system generated from HSi(OCH2CH2)(3)N 3nd Si(100)-2x1 and compared to the result obtained from a species containing similar coordination about silicon, HSi(OCH3)(3). The dramatic difference in the products obtained is explained in terms of the chelate effect. The results are compared to previous results obtained using spherosiloxane clusters and an empirical, model-compound-based core-level shift assignment scheme is compared and contrasted with the conventional formal oxidation state assignment scheme.

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收藏

页码：7686 / 7689

页数：4

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