SiC materials - Progress, status, and potential roadblocks

被引：166

作者：

Powell, AR ^{[1
]}

Rowland, LB

机构：

[1] Cree Inc, Durham, NC 27703 USA

[2] GE Co, Corp Res & Dev, Nishayuna, NY 12309 USA

来源：

PROCEEDINGS OF THE IEEE | 2002年 / 90卷 / 06期

关键词：

blue light-emitting diodes (LEDs); high power switching; hot-wall epitaxy; physical vapor transport; SiC substrates; vapor phase epitaxy;

D O I：

10.1109/JPROC.2002.1021560

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emitting diodes (LEDs). Emerging markets for SiC homoepitaxy include high-power switching devices and microwave devices for S and X band. Applications for heteroepitaxial GaN-based structures on SiC substrates include LEDs and microwave devices. In this paper we review the properties of SiC, assess the current status of substrate and epitaxial growth, and outline our expectations for SiC in the future.

引用

页码：942 / 955

页数：14

共 87 条

[61] EPITAXIAL-GROWTH OF BETA-SIC ON SILICON-ON-SAPPHIRE SUBSTRATES BY CHEMICAL VAPOR-DEPOSITION [J].