Epitaxial growth of SiC in a single and a multi wafer vertical CVD system: a comparison.

被引：11

作者：

Rupp, R ^{[1
]}

Wiedenhofer, A ^{[1
]}

Stephani, D ^{[1
]}

机构：

[1] Siemens AG, Corp Technol Dept ZT EN, D-91050 Erlangen, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

epitaxial growth; SiC; CVD;

D O I：

10.1016/S0921-5107(98)00484-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

First results about a new system suited for epitaxial growth on six 2' SiC-wafers at a time are presented in comparison to typical results in a single wafer CVD system. As expected, the multi wafer system today shows a by one order of magnitude higher background impurity level (less than or equal to 10(15) cm(-3) compared to less than or equal to 10(14) cm(-3)). On the other hand, the doping homogeneity is already very encouraging. The total variation on a 2 inch wafer is less than +/- 20% at about 1*10(16) cm(-3). The surface of the epitaxial layers is very smooth with a typical growth step height of 0.5 nm (4H 8 degrees off orientation). First measurements on Schottky diodes show low leakage current values indicating low point defect density in the epitaxial layers. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：125 / 129

页数：5

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