Mechanisms of charging in electron spectroscopy

被引:199
作者
Cazaux, J [1 ]
机构
[1] LASSI, DTI, CNRS, EP 120, F-51687 Reims 2, France
关键词
charging effects; insulators; radiation damage; ion migration; desorption;
D O I
10.1016/S0368-2048(99)00068-7
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
From the use of physical arguments based on classical electrostatics and elementary solid state physics, the role of the various parameters involved in the charging mechanisms of insulating materials is analysed in detail when these insulating specimens are investigated by surface analytical techniques (mainly XPS and e(-)AES). The role of the sub-surface composition and structure is outlined and the strong correlations between charging effects and some radiation damage effects are pointed out. Some strategies are also deduced to minimise these effects. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:155 / 185
页数:31
相关论文
共 98 条
[31]   PHOTON-STIMULATED DESORPTION FROM CAF2 AND BAF2 THIN-FILMS GROWN EPITAXIALLY ON GAAS(100) SURFACES [J].
EBERHARDT, W ;
COLBOW, KM ;
GAO, Y ;
ROGERS, D ;
TIEDJE, T .
PHYSICAL REVIEW B, 1992, 46 (19) :12388-12393
[32]   BIASED REFERENCING EXPERIMENTS FOR THE XPS ANALYSIS OF NONCONDUCTING MATERIALS [J].
EDGELL, MJ ;
BAER, DR ;
CASTLE, JE .
APPLIED SURFACE SCIENCE, 1986, 26 (02) :129-149
[33]   THE USE OF AN ELECTRON FLOOD GUN WHEN ADOPTING MONOCHROMATIC AGL-ALPHA RADIATION FOR THE XPS ANALYSIS OF INSULATORS [J].
EDGELL, MJ ;
PAYNTER, RW ;
CASTLE, JE .
SURFACE AND INTERFACE ANALYSIS, 1986, 8 (03) :113-119
[34]  
FEIST WM, 1968, ADV ELECT ELECT PH S, V4, P1
[35]   CHARGING AND ROTATIONAL DEPENDENCE OF LINE-POSITION [J].
FREUND, HJ ;
GONSKA, H ;
LOHNEISS, H ;
HOHLNEICHER, G .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1977, 12 (04) :425-434
[36]   MODIFICATION OF THE ELECTRICAL AND MECHANICAL-PROPERTIES OF AL-GAAS INTERFACES INDUCED BY LOW-ENERGY ELECTRON-IRRADIATION [J].
GAZECKI, J ;
WILLIAMS, JS ;
COZZOLINO, C .
SURFACE AND INTERFACE ANALYSIS, 1988, 11 (03) :156-159
[37]  
GELIUS U, 1992, PHOTOEMISSION PAST F
[38]  
GELLER JD, 1995, VIDE SCI TECHNIQUE A, V275, P644
[39]  
GELLER JD, 1995, P 2 INT C SOL DIEL C
[40]   IMPORTANCE OF PHOTOCONDUCTION IN ESCA EXPERIMENTS [J].
GONSKA, H ;
FREUND, HJ ;
HOHLNEICHER, G .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1977, 12 (04) :435-441