MODIFICATION OF THE ELECTRICAL AND MECHANICAL-PROPERTIES OF AL-GAAS INTERFACES INDUCED BY LOW-ENERGY ELECTRON-IRRADIATION

被引：4

作者：

GAZECKI, J

WILLIAMS, JS

COZZOLINO, C

机构：

来源：

SURFACE AND INTERFACE ANALYSIS | 1988年 / 11卷 / 03期

关键词：

SEMICONDUCTING ALUMINUM COMPOUNDS - Radiation Effects - SEMICONDUCTING GALLIUM ARSENIDE - Radiation Effects;

D O I：

10.1002/sia.740110306

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Changes in the Al-GaAs Schottky characteristics after low energy (20 kev) and low fluence ( less than 10**1**7 cm** minus **2) electron irradiation have been investigated and correlated with film adhesion enhancement which also results from electron bombardment. The electrical and mechanical characteristics were measured as a function of irradiation dose. The observed lowering of the barrier height after irradiation can be related to an induced positive charge in the interfacial layer. It is suggested that this positive charge may be partly responsible for the adhesion enhancement of the Al film to the GaAs substrate.

引用

页码：156 / 159

页数：4

共 26 条

[1] SCHOTTKY CONTACT BARRIER HEIGHT MODIFICATION BY ION-IMPLANTATION OF AL INTO GAAS [J].