Homogeneous growth of zinc oxide whiskers

被引：60

作者：

Saitoh, H ^{[1
]}

Satoh, M

Tanaka, N

Ueda, Y

Ohshio, S

机构：

[1] Nagaoka Univ Technol, Nagaoka, Niigata 9402188, Japan

[2] Asahi Chem Ind Co Ltd, Kawasaki Ku, Kawasaki, Kanagawa 2100863, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 12A期

关键词：

epitaxy; orientation; whisker; ZnO; sapphire; CVD; SEM; X-ray diffraction;

D O I：

10.1143/JJAP.38.6873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Several common modes of crystal growth provide particularly simple and elegant examples of spontaneous spontaneous pattern formation not only in nature but also under artificial circumstances. We have already reported that well-organized ZnO whiskers are epitaxially grown using a chemical vapor deposition technique [Satoh et al.: Jpn. J. of Appl. Phys. 38 (1999) L586]. One aim of this study is to determine the optimum growth conditions for obtaining the structure containing homogeneous whiskers grown with a relatively high growth rate. A substrate temperature of 550 degrees C and a vaporizing temperature of 125 degrees C are the most appropriate for obtaining homogeneous whiskers. Whiskers are highly oriented in the a-and c-axes directions of the hexagonal structure. The growth rate reached a maximum value as high as 7.5 nm/s.

引用

页码：6873 / 6877

页数：5

共 10 条

[1] FUNDAMENTALS OF CHEMICAL VAPOR-DEPOSITION [J].