Reliable Bottom Gate Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors with TiOx Passivation Layer

被引：46

作者：

Seo, Hyun-Sik ^{[1
,2
]}

Bae, Jong-Uk ^{[1
]}

Kim, Dae-Hwan ^{[1
]}

Park, YuJin ^{[1
]}

Kim, Chang-Dong ^{[1
]}

Kang, In Byeong ^{[1
]}

Chung, In-Jae ^{[1
]}

Choi, Ji-Hyuk ^{[2
]}

Myoung, Jae-Min ^{[2
]}

机构：

[1] Ctr Res & Dev, LG Display, Gyonggi 413811, South Korea

[2] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 09期

关键词：

amorphous semiconductors; electrochemical electrodes; gallium compounds; heat treatment; indium compounds; leakage currents; molybdenum; plasma materials processing; semiconductor materials; semiconductor thin films; thin film transistors; titanium; titanium compounds;

D O I：

10.1149/1.3168522

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Titanium oxide (TiOx) passivation layer was employed and optimized to stabilize the performance of the bottom gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). A molybdenum/titanium (Mo/Ti) source-drain electrode was deposited on an a-IGZO layer, and the TiOx passivation layer was formed by oxidizing the Ti layer using oxygen plasma after etching the Mo layer. By increasing the oxygen plasma treatment time, the subthreshold slope and leakage current of the a-IGZO TFTs were improved to 0.78 V decade(-1) and 0.3 pA, respectively, and the degradation of the TFT performance was not observed, even after thermal treatment at 280 degrees C for 1 h.

引用

页码：H348 / H351

页数：4

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