Reactive-ion-etched gallium nitride: Metastable defects and yellow luminescence

被引：42

作者：

Brown, SA ^{[1
]}

Reeves, RJ

Haase, CS

Cheung, R

Kirchner, C

Kamp, M

机构：

[1] Univ Canterbury, Dept Phys & Astron, Christchurch 1, New Zealand

[2] Univ Canterbury, Dept Elect & Elect Engn, Christchurch 1, New Zealand

[3] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 21期

关键词：

D O I：

10.1063/1.125326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium nitride has been reactive-ion etched with SF6 and argon plasmas. The Ar-etched samples show a striking transition from a dominant blue luminescence band to a dominant yellow luminescence band after less than 5 min of low power illumination. The observation of metastable defects which are associated with both the yellow and blue bands has important consequences for our understanding of defect-related luminescence in gallium nitride. (C) 1999 American Institute of Physics. [S0003-6951(99)00747-0].

引用

页码：3285 / 3287

页数：3

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