Enhanced photoluminescence of InGaAs quantum dots induced by nanoprobe indentation

被引：8

作者：

Ozasa, K

Aoyagi, Y

Hara, M

Maeda, M

Yamane, A

Arai, Y

机构：

[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

[2] JST, CREST, Tokyo 1500002, Japan

[3] Saitama Univ, Urawa, Saitama 3388570, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 21卷 / 2-4期

关键词：

nanoprobe indentation; deformation potential; quantum dots; strain effects;

D O I：

10.1016/j.physe.2003.11.068

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have found in the nanoprobe-photoluminesenece (PL) measurement that the PL from InGaAs quantum dots was enhanced remarkably by small elastic indentation of the nanoprobe onto the sample surface. In order to clarify the mechanism of the PL enhancement, the nanoprobe-induced strain distribution and the energy-band profiles in the bulk GaAs have been calculated on the bases of linear continuum elastic theory and six-band strain Hamiltonian. It was found that the nm-scale strain modulation by the nanoprobe indentation results in the confinement potential for light holes 50-70 nm beneath the nanoprobe, revealing that the hole accumulation into the minimum causes the PL enhancement. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：265 / 269

页数：5

共 18 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].