High speed, high temperature operation of 1.28 μm singlemode InGaAsVCSELs

被引：11

作者：

Soderberg, E. ^{[1
]}

Modh, R.

Gustavsson, J. S.

Larsson, A.

Zhang, Z. Z.

Berggren, J.

Hammar, M.

机构：

[1] Chalmers, Photon Lab, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

[2] Royal Inst Technol, Dept Microelect & Appl Phys, SE-16440 Kista, Sweden

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 17期

关键词：

SURFACE-EMITTING LASERS; VCSELS; RELIEF;

D O I：

10.1049/el:20062102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Singlemode 1.28 mu m InGaAs VCSELs, with a higher-order mode suppression > 30 dB in the temperature range 25-85 degrees C, have been fabricated using an inverted surface relief technique for relaxed fabrication tolerances. High performance 2.5 and 10 Gbit/s modulation is demonstrated in the same temperature range.

引用

页码：978 / 980

页数：3

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