Single-mode 1.27-μm InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers

被引：16

作者：

Kuo, HC ^{[1
]}

Chang, YH ^{[1
]}

Chang, YA ^{[1
]}

Lai, FI ^{[1
]}

Chu, JT ^{[1
]}

Tsai, MN ^{[1
]}

Wang, SC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2005年 / 11卷 / 01期

关键词：

characterization; InGaAsSb; laser diodes; metalorganic chemical vapor deposition (MOCVD); optical fiber devices; semiconducting;

D O I：

10.1109/JSTQE.2004.841696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 1.27-mum InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current varies from 1.8 to 1.1 mA and the slope efficiency falls less than similar to35% from 0.17 to 0.11 mW/mA as the temperature is raised from room temperature to 75 degreesC. The VCSELs continuously operate up to 105 degreesC with a slope efficiency of 0.023 mW/mA. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is estimated to be 10.7 GHz(1/2) with modulation current efficiency factor of similar to5.25 GHz/(mA)(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25degreesC to 70degreesC. We also accumulated life test data up to 1000 h at 70degreesC/10 mA.

引用

页码：121 / 126

页数：6

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