High-performance 1.3μm InGaAs vertical cavity surface emitting lasers

被引：44

作者：

Sundgren, P

von Würtemberg, RM

Berggren, J

Hammar, M

Ghisoni, M

Oscarsson, V

Ödling, E

Malmquist, J

机构：

[1] Royal Inst Technol, Dept Microelect & Informat Technol, S-16440 Kista, Sweden

[2] Zarlink Semicond AB, S-17526 Jarfalla, Sweden

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 15期

关键词：

D O I：

10.1049/el:20030733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A report is presented on high-performance InGaAs/GaAs double quantum well vertical cavity surface emitting lasers (VCSELs) with record long emission wavelengths up to 1300 nm. Due to a large gain-cavity detuning these VCSELs show excellent temperature performance with very stable threshold current and output power characteristics. For 1.27 mum singlemode devices the threshold current is found to decrease from 2 to 1 mA between 10 and 90degreesC, while the peak output power only drops from 1 to 0.6 mW Large-area 1300 nm VCSELs show multimode output power close to 3 mW.

引用

页码：1128 / 1129

页数：2

共 11 条

[1] 1260 nm InGaAs vertical-cavity lasers [J].

Asplund, C ;

Sundgren, P ;

Mogg, S ;

Hammar, M ;

Christiansson, U ;

Oscarsson, V ;

Runnstrm, C ;

Odling, E ;

Malmquist, J .

ELECTRONICS LETTERS, 2002, 38 (13) :635-636

[2] Doping-induced losses in AlAs/GaAs distributed Bragg reflectors [J].

Asplund, C ;

Mogg, S ;

Plaine, G ;

Salomonsson, F ;

Chitica, N ;

Hammar, M .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) :794-800

[3] 1300-nm GaAs-based vertical-cavity lasers [J].

Hammar, M ;

Asplund, C ;

Sundgren, P ;

Mogg, S ;

Christiansson, U ;

Aggerstam, T ;

Oscarsson, V ;

Runnström, C ;

Ödling, E ;

Malmquist, J .

VCSELS AND OPTICAL INTERCONNECTS, 2003, 4942 :137-149

[4]

*IEEE STAND DEP, 2002, P8023AE IEEE

[5]

Jack A, 2001, AM J KIDNEY DIS, V37, pA12

[6] Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice [J].

Largeau, L ;

Bondoux, C ;

Patriarche, G ;

Asplund, C ;

Fujioka, A ;

Salomonsson, F ;

Hammar, M .

APPLIED PHYSICS LETTERS, 2001, 79 (12) :1795-1797

[7]

*OIF, 2001, OIFVSR4020

[8] Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region [J].

Ramakrishnan, A ;

Steinle, G ;

Supper, D ;

Degen, C ;

Ebbinghaus, G .

ELECTRONICS LETTERS, 2002, 38 (07) :322-324

[9] Data transmission up to 10Gbit/s with 1.3μm wavelength InGaAsNVCSELs [J].

Steinle, G ;

Mederer, F ;

Kicherer, M ;

Michalzik, R ;

Kristen, G ;

Egorov, AY ;

Riechert, H ;

Wolf, HD ;

Ebeling, KJ .

ELECTRONICS LETTERS, 2001, 37 (10) :632-634

[10] 1.3 μm InGaAsN vertical cavity surface emitting lasers grown by MOCVD [J].

Takeuchi, T ;

Chang, YL ;

Leary, M ;

Tandon, A ;

Luan, HC ;

Bour, D ;

Corzine, S ;

Twist, R ;

Tan, M .

ELECTRONICS LETTERS, 2002, 38 (23) :1438-1440

← 1 2 →