1300-nm GaAs-based vertical-cavity lasers

被引：5

作者：

Hammar, M ^{[1
]}

Asplund, C ^{[1
]}

Sundgren, P ^{[1
]}

Mogg, S ^{[1
]}

Christiansson, U ^{[1
]}

Aggerstam, T ^{[1
]}

Oscarsson, V ^{[1
]}

Runnström, C ^{[1
]}

Ödling, E ^{[1
]}

Malmquist, J ^{[1
]}

机构：

[1] Zarlink Semicond AB, S-17526 Jarfalla, Sweden

来源：

VCSELS AND OPTICAL INTERCONNECTS | 2003年 / 4942卷

关键词：

vertical-cavity laser; VCSEL; VCL; GaInNAs; InGaAs; long wavelength;

D O I：

10.1117/12.470815

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We compare GaInNAs and highly strained InGaAs quantum-wells (QWs) for applications in metal-organic vapor-phase epitaxy (MOVPE)-grown GaAs-based 1300-nm vertical-cavity lasers (VCLs). While the peak wavelength of InGaAs QWs can be extended by a small fraction of N, the luminescence efficiency degrades strongly with wavelength. On the other hand, using highly strained InGaAs QWs in combination with a large VCL detuning it is also possible to push the emission wavelength towards 1.3 mum. The optimized MOVPE growth conditions for such QW and VCL structures are discussed in some detail. It is noted that GaInNAs and InGaAs QWs preferably are grown at low temperature, but with quite different VIII ratios and growth rates. We also point out the importance of reduced doping concentration and growth temperature of the n-doped bottom distributed Bragg reflector to minimize optical loss and for compatibility with GaInNAs QWs. InGaAs VCLs with emission wavelengths beyond 1260 run are demonstrated. This includes mW-range output power, mA-range threshold current and 10 Gb/s data transmission.

引用

页码：137 / 149

页数：13

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