1260 nm InGaAs vertical-cavity lasers

被引：25

作者：

Asplund, C

Sundgren, P

Mogg, S

Hammar, M

Christiansson, U

Oscarsson, V

Runnstrm, C

Odling, E

Malmquist, J

机构：

[1] Royal Inst Technol, Dept Microelect & Informat Technol, S-16440 Kista, Sweden

[2] Zarlink Semicond AB, S-17526 Jarfalla, Sweden

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 13期

关键词：

D O I：

10.1049/el:20020431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication and performance of highly strained double-quantum well InGaAs/GaAs vertical-cavity lasers with record-long emission wavelength of 1260 nm at room temperature is reported. Depending on device diameter, the minimum threshold current is in the low mA-regime while the maximum output power exceeds 1 mW. The devices work continuous-wave over a wide temperature range of at least 10-120degrees C.

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页码：635 / 636

页数：2

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