Low-threshold, high-temperature operation of 1.2 μm InGaAs vertical cavity lasers

被引：16

作者：

Salomonsson, F

Asplund, C

Sundgren, P

Plaine, G

Mogg, S

Hammar, M

机构：

[1] Royal Inst Technol, Dept Microelect & Informat Technol, S-16440 Kista, Sweden

[2] Mitel Semicond AB, S-17526 Jarfalla, Sweden

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 15期

关键词：

D O I：

10.1049/el:20010644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth and characterisation of high performance InGaAs/GaAs quantum-well vertical cavity lasers with an emission wavelength of 1215 run is reported. Continuous wave operation is demonstrated up to 105 degreesC with a threshold current below I mA for T < 80 degreesC. For a 2.5 mum device the room temperature threshold current, output power and slope efficiency is 0.6 mA, 0.6 mW and 0.2 W/A, respectively.

引用

收藏

页码：957 / 958

页数：2

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