N-type doping induced losses ln 1.3/1.55 μm distributed Bragg reflectors

被引：4

作者：

Mogg, S ^{[1
]}

Salomonsson, F ^{[1
]}

Asplund, C ^{[1
]}

Plaine, G ^{[1
]}

Chitica, N ^{[1
]}

Hammar, P ^{[1
]}

机构：

[1] Royal Inst Technol, Dept Elect, Lab Semicond Mat, S-16440 Kista, Sweden

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of n-type doping on the peak reflectivity of InGaAsP/InP as well as GaAs/AlAs distributed Bragg reflectors for long-wavelength vertical-cavity lasers has been investigated. A variety of mirrors with different doping levels were grown in both material systems using metal organic vapour phase epitaxy. The reflectance of the structures was measured with high accuracy employing two independent measurement techniques. While nominally undoped DBRs exhibit an expected reflectivity in excess of 99.9 %, doping is found to induce significant losses resulting in up to 0.6 % reduced reflectance.

引用

页码：388 / 391

页数：4

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