OPTICAL-PROPERTIES OF DISORDERED GAAS (AL,GA)AS DISTRIBUTED BRAGG REFLECTORS

被引：8

作者：

FLOYD, PD

MERZ, JL

机构：

[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 12期

关键词：

D O I：

10.1063/1.356597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The variation of the reflectivity, stopband width, and penetration depth of disordered GaAs/(Al,Ga)As distributed Bragg reflectors (DBRs) is analyzed by simulating interdiffusion of Al and Ga at the interfaces within the DBR. The results show that important optical parameters are unchanged for short diffusion lengths, but drastically degrade for larger diffusion lengths. The results indicate the limits of thermal processing for device structures containing GaAs/AlGaAs DBRs.

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页码：7666 / 7668

页数：3

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