HIGH-REFLECTIVITY GAAS-ALGAAS MIRRORS - SENSITIVITY ANALYSIS WITH RESPECT TO EPITAXIAL-GROWTH PARAMETERS

被引：17

作者：

BAETS, R

DEMEESTER, P

LAGASSE, PE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.339752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：723 / 726

页数：4

共 8 条

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[8] MULTILAYER GAAS-AL0.3GA0.7AS DIELECTRIC QUARTER WAVE STACKS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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