1.21 μm continuous-wave operation of highly strained GaInAs quantum well lasers an GaAs substrates

被引：37

作者：

Sato, S ^{[1
]}

Satoh, S ^{[1
]}

机构：

[1] Ricoh Co Ltd, Gen Elect Res & Dev Ctr, Natori, Miyagi 9811241, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 9AB期

关键词：

GaInAs; GaAs substrate; quantum wells; semiconductor lasers; long wavelength; metalorganic chemical vapor deposition; strain; GaInNAs;

D O I：

10.1143/JJAP.38.L990

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly strained GaInAs quantum well lasers emitting at 1.21 mu m are fabricated on GaAs substrates. Room-temperature continuous-wave operation with a low threshold current density of 360 A/cm(2) is achieved. 1.3 mu m GaInNAs/GaAs lasers can be fabricated at a low nitrogen content of 0.5%.

引用

页码：L990 / L992

页数：3

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