IMPROVED GAINAS GAAS HETEROSTRUCTURES BY HIGH GROWTH-RATE MOLECULAR-BEAM EPITAXY

被引：19

作者：

GRANDJEAN, N ^{[1
]}

MASSIES, J ^{[1
]}

LEROUX, M ^{[1
]}

LEYMARIE, J ^{[1
]}

VASSON, A ^{[1
]}

VASSON, AM ^{[1
]}

机构：

[1] UNIV CLERMONT FERRAND,PHYS MILIEUX CONDENSES LAB,F-63177 CLERMONT FERRAND,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 20期

关键词：

D O I：

10.1063/1.111485

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work shows that the critical thickness for the two-dimensional-three-dimensional growth mode transition during the growth of Ga0.65In0.35As on GaAs(001) can be significantly increased by increasing the growth rate. This experimental finding is corroborated by a Monte Carlo simulation of this heteroepitaxial growth. Improved quantum well optical properties are demonstrated.

引用

页码：2664 / 2666

页数：3

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