Strained-layer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers on a low-composition InGaAs substrate by selective-area MOCVD

被引：6

作者：

Jones, AM ^{[1
]}

Coleman, JJ

Lent, B

Moore, AH

Bonner, WA

机构：

[1] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

[2] Crystar Res Inc, Victoria, BC V8Z 3B6, Canada

[3] EG&G Canada Ltd, Div Optoelect, Vaudreuil, PQ J7V 8P7, Canada

[4] Crystallod Inc, Somerville, NJ 08876 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 04期

关键词：

compensation; crystal growth; quantum-well lasers; semiconductor growth; semiconductor lasers; semiconductor materials; strain;

D O I：

10.1109/68.662570

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminum-free buried-heterostructure quantum-well lasers have been successfully fabricated on low-composition InGaAs:n substrates. Selective-area metalorganic chemical vapor deposition (MOCVD) was utilized to investigate a variety of InGaAs quantum wells with a wide range of composition and thickness. Compressively strained quantum wells can be deposited thicker on substrates of InGaAs than GaAs before the generation of misfit dislocations. These deeper potential wells enable laser diodes with longer wavelengths (1.1504 mu m) than GaAs-based emitters and higher characteristic temperatures (145 K) than InP-based devices.

引用

收藏

页码：489 / 491

页数：3

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