OC-48 capable InGaAsN vertical cavity lasers

被引:69
作者
Jackson, AW
Naone, RL
Dalberth, MJ
Smith, JM
Malone, KJ
Kisker, DW
Klem, JF
Choquette, KD
Serkland, DK
Geib, KM
机构
[1] Cielo Commun Inc, Broomfield, CO 80021 USA
[2] Sandia Natl Labs, Ctr Cpd Semicond Sci & Technol, Albuquerque, NM 87185 USA
关键词
D O I
10.1049/el:20010232
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A selectively oxidised InGaAsN/GaAs three quantum well vertical cavity laser (VCSEL) demonstrated continuous wave (CW) lasing with a singlemode output power of 0.749mW at 1266nm. This is the first reported InGaAsN VCSEL capable of meeting the power and wavelength requirements for both OC-48 SR and OC-48 IR-1 compliant links. The VCSEL uses two low absorption n-type GaAs/AlGaAs distributed Bragg reflectors and a tunnel junction to achieve current injection into the active region. A multimode version of the VCSEL had a output power of 1.43mW at 1.26 mum. CW lasing continued up to temperatures as high as 107 degreesC. The VCSEL material was grown by solid source molecular beam epitaxy with an RF nitrogen plasma source.
引用
收藏
页码:355 / 356
页数:2
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