Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing

被引：28

作者：

Mei, JX

Rui, YJ

Ma, ZY

Xu, J ^{[1
]}

Zhu, D

Yang, L

Li, X

Li, W

Huang, XF

Chen, KJ

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2004年 / 131卷 / 11期

基金：

中国国家自然科学基金;

关键词：

nanostrucrures; optical properties; infrared;

D O I：

10.1016/j.ssc.2004.06.031

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

a-Si:FVSiO2 multilayers have been prepared by alternating changing plasma enhanced chemical vapor deposition of a-Si:H layers and in situ plasma oxidation process. A series of step by step thermal annealing from 350 to 1100 degreesC were employed as the post treating procedure. Fourier Transform Infrared (FTIR) and photoluminescence (PL) spectra were measured as a function of annealing temperature. A broad red photoluminescence band ranged from 550-720 nm arises as the annealing temperature increases and vanishes after annealing above 650 degreesC. A strong luminescence peak at 750 nm is observed for annealing temperature above 950 degreesC. It is suggested that various luminescence centers contribute to the PL bands simultaneously, which can be related to the different bonding configurations of H and O during the annealing process. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：701 / 705

页数：5

共 18 条

[1] Luminescence studies of a Si/SiO2 superlattice [J].