Integration of ferroelectric Ca2Bi4Ti5O18 thin films on Pt-passivated Si via spin-coating technique

Ca2Bi4Ti5O18 (CBTi245) thin films were deposited by spin-coating a precursor solution of metal alkoxides on Pt-passivated Si substrates. Thickness of the as-deposited amorphous layer affected the nucleation site, microstructure and electrical properties. The onset of crystallization of thin films to a pyrochlore phase was below 550degreesC via rapid thermal annealing in oxygen. A perovskite phase developed by further annealing at temperatures of 650degreesC or higher. The CBTi245 thin films which were prepared by multi-coating and multicrystallizing of the 20 run-thick amorphous layer showed random orientation, a columnar-like structure, and P-E hysteresis loops.