Phase transition, ferroelectric, and dielectric properties of layer-structured perovskite CaBi3Ti3O12-δ thin films

Thin films of a bismuth-based layer-structured perovskite compound with a number of oxygen octahedron along the c axis between Bi-O layers of three, CaBi3Ti3O12-delta, were prepared using a mixture solution of complex alkoxides. The films crystallized below 550 degreesC. The crystal structure and surface morphology of these films changed between 600 and 650 degreesC. The 650 degreesC-annealed thin film consisted of well-developed grains and exhibited polarization-electric hysteresis loops. The remanent polarization and coercive electric field were 8.5 muC/cm(2) and 124 kV/cm, respectively, at 7 V. The dielectric constant and loss factor were about 250 and 0.048, respectively, at 100 kHz. (C) 2001 American Institute of Physics.