Ferroelectric properties of alkoxy-derived CaBi2Ta2O9 thin films

被引：24

作者：

Kato, K

Suzuki, K

Nishizawa, K

Miki, T

机构：

[1] Natl Ind Res Inst Nagoya, Kita Ku, Nagoya, Aichi 4628510, Japan

[2] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 06期

关键词：

D O I：

10.1063/1.1290257

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CaBi2Ta2O9 thin films were deposited on Pt-passivated quartz glass substrates. The 750 degrees C-annealed thin film was a single phase of layer-structured perovskite and showed random orientation. The thin film exhibited a P-E hysteresis loop. The remanent polarization (P-r) and coercive electric field (E-c) at 13 V were 6 mu C/cm(2) and 160 kV/cm, respectively. The polarization did not show fatigue after 2x10(10) switching cycles. (C) 2000 American Institute of Physics. [S0021-8979(00)10219-1].

引用

页码：3779 / 3780

页数：2

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