Adaptive Logic Circuits with Doping-Free Ambipolar Carbon Nanotube Transistors

被引：100

作者：

Yu, Woo Jong ^{[2
]}

Kim, Un Jeong ^{[1
]}

Kang, Bo Ram ^{[2
]}

Lee, Il Ha ^{[2
]}

Lee, Eun-Hong ^{[1
]}

Lee, Young Hee ^{[2
]}

机构：

[1] Samsung Adv Inst Technol, Frontier Res Lab, Yongin 449712, Kyeongki Do, South Korea

[2] Sungkyunkwan Univ, Sungkyunkwan Adv Inst Nanotechnol, Dept Energy Sci,Phys Div BK21, Dept Phys,Ctr Nanotubes & Nanostruct Composites, Suwon 440746, South Korea

来源：

NANO LETTERS | 2009年 / 9卷 / 04期

关键词：

FIELD-EFFECT TRANSISTORS; ELECTRONICS; GROWTH; ARRAYS; GATES;

D O I：

10.1021/nl803066v

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A CMOS-like inverter was integrated by using ambipolar carbon nanotube (CNT) transistors without doping. The ambipolar CNT transistors automatically configure themselves to play a role as an n-type or p-type transistor in a logic circuit depending on the supply voltage (VDD) and ground. A NOR (NAND) gate is adaptively converted to a NAND (NOR) gate. This adaptiveness of logic gates exhibiting two logic gate functions in a single logic circuit offers a new opportunity for designing logic circuits with high integration density for next generation applications.

引用

页码：1401 / 1405

页数：5

共 27 条

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