Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy

被引：26

作者：

Jun, SW ^{[1
]}

Fetzer, CM ^{[1
]}

Lee, RT ^{[1
]}

Shurtleff, JK ^{[1
]}

Stringfellow, GB ^{[1
]}

机构：

[1] Univ Utah, Coll Engn, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 19期

关键词：

D O I：

10.1063/1.126453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of the isoelectronic surfactant Bi on surface structure and ordering has been studied for GaInP semiconductor alloys grown by organometallic vapor-phase epitaxy. A small amount of Bi (trimethylbismuth) added during growth is found to result in disordering for layers grown using conditions that would otherwise produce highly ordered materials. An order of magnitude increase in the step velocity was observed by atomic-force microscopy. Bi completely eliminates three-dimensional islands on the singular (001) surface. (C) 2000 American Institute of Physics. [S0003-6951(00)03919-X].

引用

页码：2716 / 2718

页数：3

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