NEW WINDOW-STRUCTURE INGAALP VISIBLE-LIGHT LASER-DIODES BY SELF-SELECTIVE ZN DIFFUSION-INDUCED DISORDERING

被引：29

作者：

ITAYA, K

ISHIKAWA, M

HATAKOSHI, G

UEMATSU, Y

机构：

[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 06期

关键词：

D O I：

10.1109/3.89969

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the behavior of Zn diffusion in InGaAlP double heterostructures during a second MOCVD growth, and found that the behavior of Zn diffusion strongly depended on the presence of an n-GaAs capping layer. We designed a new process for InGaAlP window-structure InGaAlP laser diodes using this unique diffusion behavior and disordering of a natural superlattice. A window structure realizing a high power operation has been successfully fabricated without any complicated process. A maximum output power above 80 mW has been obtained for CW operation, and 400 mW for pulsed operation.

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页码：1496 / 1500

页数：5

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