LONG-TERM RELIABILITY TESTS FOR INGAAIP VISIBLE LASER-DIODES

[1] AGING CHARACTERISTICS OF ALGAINP/GAINP VISIBLE-LIGHT LASERS (LAMBDA-L = 678 NM) [J]. ELECTRONICS LETTERS, 1987, 23 (02) : 85 - 85

[2] 680-NM BAND GAINP/ALGAINP TAPERED STRIPE LASER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1572 - 1573

[3] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1027 - 1028

[4] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 48 (03) : 207 - 208

[5] Ishikawa M, 1986, 18TH INT C SOL STAT, P153

[6] A NEW TRANSVERSE-MODE STABILIZED INGAALP VISIBLE-LIGHT LASER DIODE USING P-P ISOTYPE HETEROBARRIER BLOCKING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2414 - L2416

[7] EFFECT OF FACET COATING ON THE RELIABILITY OF INGAAIP VISIBLE-LIGHT LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (15) : 1363 - 1365

[8] ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS [J]. ELECTRONICS LETTERS, 1985, 21 (20) : 931 - 932

[9] ZN DOPING CHARACTERISTICS FOR INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1988, 53 (22) : 2182 - 2184

[10] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 374 - 379

[1] AGING CHARACTERISTICS OF ALGAINP/GAINP VISIBLE-LIGHT LASERS (LAMBDA-L = 678 NM) [J]. ELECTRONICS LETTERS, 1987, 23 (02) : 85 - 85

[2] 680-NM BAND GAINP/ALGAINP TAPERED STRIPE LASER [J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1572 - 1573

[3] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1027 - 1028

[4] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 48 (03) : 207 - 208

[5] Ishikawa M, 1986, 18TH INT C SOL STAT, P153

[6] A NEW TRANSVERSE-MODE STABILIZED INGAALP VISIBLE-LIGHT LASER DIODE USING P-P ISOTYPE HETEROBARRIER BLOCKING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2414 - L2416

[7] EFFECT OF FACET COATING ON THE RELIABILITY OF INGAAIP VISIBLE-LIGHT LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (15) : 1363 - 1365

[8] ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS [J]. ELECTRONICS LETTERS, 1985, 21 (20) : 931 - 932

[9] ZN DOPING CHARACTERISTICS FOR INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1988, 53 (22) : 2182 - 2184

[10] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 374 - 379